IMS2620P-10
INMOS
- Lifecycle statusTransferred
- DescriptionDRAM, 16KX4, 100ns, MOS, PDIP18
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.02
- SB Code8542.32.00.15
- I/O TypeCOMMON
- TechnologyMOS
- JESD-30 CodeR-PDIP-T18
- Memory Width4
- Organization16KX4
- Package CodeDIP
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- Memory Density65536 bit
- Memory IC TypeOTHER DRAM
- Refresh Cycles256
- Terminal Pitch2.54 mm
- Access Time-Max100 ns
- Number of Words16384 words
- Terminal FinishTin/Lead (Sn/Pb)
- Temperature GradeCOMMERCIAL
- Terminal PositionDUAL
- Supply Current-Max90 mA
- Number of Terminals18
- Number of Words Code16K
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Package Equivalence CodeDIP18,.3
- Operating Temperature-Max70 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Nom (Vsup)5 V
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IMS2620P-10