IMS2600S-100M
INMOS
- Lifecycle statusTransferred
- DescriptionPage Mode DRAM, 64KX1, 100ns, MOS, CDIP16
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.02
- SB Code8542.32.00.15
- I/O TypeSEPARATE
- TechnologyMOS
- JESD-30 CodeR-XDIP-T16
- Memory Width1
- Organization64KX1
- Package CodeDIP
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- Memory Density65536 bit
- Memory IC TypePAGE MODE DRAM
- Refresh Cycles256
- Terminal Pitch2.54 mm
- Access Time-Max100 ns
- Number of Words65536 words
- Screening Level38535Q/M;38534H;883B
- Terminal FinishTin/Lead (Sn/Pb)
- Temperature GradeOTHER
- Terminal PositionDUAL
- Supply Current-Max85 mA
- Number of Terminals16
- Number of Words Code64K
- Qualification StatusNot Qualified
- Package Body MaterialCERAMIC
- Output Characteristics3-STATE
- Package Equivalence CodeDIP16,.3
- Operating Temperature-Max110 Cel
- Operating Temperature-Min-55 Cel
- Supply Voltage-Nom (Vsup)5 V
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IMS2600S-100M