IGN1011L1200
INTEGRA TECHNOLOGIES INC
- Lifecycle statusActive
- RoHSRoHS compliant
- DescriptionGAN, RF POWER TRANSISTOR, L-BAND
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-CDFM-F2
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyHIGH ELECTRON MOBILITY
- Operating ModeDEPLETION MODE
- Case ConnectionSOURCE
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals2
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandL BAND
- Transistor ApplicationAMPLIFIER
- DS Breakdown Voltage-Min180 V
- Operating Temperature-Min-55 Cel
- Transistor Element MaterialGALLIUM NITRIDE
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IGN1011L1200