IFU1N80
JSC INTEGRAL
- Lifecycle statusContact Mfr
- DescriptionPower Field-Effect Transistor, 1.2A I(D), 800V, 18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSIP-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)1.2 A
- DS Breakdown Voltage-Min800 V
- Operating Temperature-Max150 Cel
- Power Dissipation-Max (Abs)53 W
- Transistor Element MaterialSILICON
- Avalanche Energy Rating (Eas)130 mJ
- Drain-source On Resistance-Max18 ohm
- Pulsed Drain Current-Max (IDM)4.8 A
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IFU1N80
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IFU1N80