IDT7MP6160S9M
Integrated Device Technology, Inc.
- Lifecycle statusDiscontinued
- DescriptionCache SRAM Module, 512KX8, 9ns, BICMOS
- Category
- ECCN3A991.b.2.a
- ECCN GovernanceEAR
- HTS Code8542.32.00.41
- SB Code8542.32.00.40
- I/O TypeCOMMON
- TechnologyBICMOS
- JESD-30 CodeR-XDMA-N160
- Memory Width8
- Package CodeDIMM
- Output EnableYES
- Package ShapeRECTANGULAR
- Package StyleMICROELECTRONIC ASSEMBLY Meter
- Surface MountNO
- Terminal FormNO LEAD
- Memory IC TypeCACHE SRAM MODULE
- Operating ModeSYNCHRONOUS
- Number of Ports1
- Parallel/SerialPARALLEL
- DLA QualificationNot Qualified
- Temperature GradeCOMMERCIAL
- Terminal PositionDUAL
- Additional FeatureASYNCHRONOUS VERSION AVAILABLE
- Memory Organization512KX8
- Number of Functions1
- Number of Terminals160
- Terminal Pitch (mm)1.27
- Access Time-Max (ns)9
- Number of Words Code512K
- Memory Density (bits)4194304
- Package Body MaterialUNSPECIFIED
- Output Characteristics3-STATE
- Supply Voltage-Max (V)5.25
- Supply Voltage-Min (V)4.75
- Supply Voltage-Nom (V)5
- Number of Words (words)524288
- Standby Current-Max (A)0.12
- Standby Voltage-Min (V)4.75
- Supply Current-Max (mA)1000
- Package Equivalence CodeDIMM160
- Moisture Sensitivity Level1
- Operating Temperature-Max (Cel)70
- Operating Temperature-Min (Cel)0
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IDT7MP6160S9M