Integrated Device Technology, Inc. IDT7M1005S55CB
  • ECCN
    3A001.a.2.c
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.41
  • SB Code
    8542.32.00.40
  • I/O Type
    COMMON
  • Technology
    CMOS
  • Width (mm)
    15.24
  • Length (mm)
    79.1845
  • JESD-30 Code
    R-CDIP-T60
  • Memory Width
    9
  • Package Code
    DIP
  • Package Shape
    RECTANGULAR
  • Package Style
    IN-LINE Meter
  • Surface Mount
    NO
  • Terminal Form
    THROUGH-HOLE
  • J-STD-609 Code
    e0
  • Memory IC Type
    MULTI-PORT SRAM MODULE
  • Operating Mode
    ASYNCHRONOUS
  • Number of Ports
    2
  • Parallel/Serial
    PARALLEL
  • Terminal Finish
    TIN LEAD
  • DLA Qualification
    Not Qualified
  • Temperature Grade
    MILITARY
  • Terminal Position
    DUAL
  • Additional Feature
    TTL COMPATIBLE INPUTS/OUTPUTS
  • Memory Organization
    16KX9
  • Number of Functions
    1
  • Number of Terminals
    60
  • Terminal Pitch (mm)
    2.54
  • Access Time-Max (ns)
    55
  • Number of Words Code
    16K
  • Memory Density (bits)
    147456
  • Package Body Material
    CERAMIC, METAL-SEALED COFIRED
  • Output Characteristics
    3-STATE
  • Seated Height-Max (mm)
    8.128
  • Supply Voltage-Max (V)
    5.5
  • Supply Voltage-Min (V)
    4.5
  • Supply Voltage-Nom (V)
    5
  • Number of Words (words)
    16384
  • Standby Current-Max (A)
    0.24
  • Standby Voltage-Min (V)
    4.5
  • Supply Current-Max (mA)
    860
  • Package Equivalence Code
    DIP60,.6
  • Operating Temperature-Max (Cel)
    125
  • Operating Temperature-Min (Cel)
    -55
  • Screening Level / Reference Standard
    MIL-STD-883 Class B (Modified)

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IDT7M1005S55CB