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IDT70P3337S233RMI

Integrated Device Technology, Inc.

Integrated Device Technology, Inc. IDT70P3337S233RMI
  • ECCN
    3A991.b.2.a
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.41
  • SB Code
    8542.32.00.40
  • Technology
    CMOS
  • Width (mm)
    25
  • Length (mm)
    25
  • JESD-30 Code
    S-PBGA-B576
  • Memory Width
    18
  • Package Code
    BGA
  • Package Shape
    SQUARE
  • Package Style
    GRID ARRAY Meter
  • Surface Mount
    YES
  • Terminal Form
    BALL
  • J-STD-609 Code
    e1
  • Memory IC Type
    QDR SRAM
  • Operating Mode
    SYNCHRONOUS
  • Parallel/Serial
    PARALLEL
  • Terminal Finish
    Tin/Silver/Copper (Sn/Ag/Cu)
  • DLA Qualification
    Not Qualified
  • Temperature Grade
    INDUSTRIAL
  • Terminal Position
    BOTTOM
  • Memory Organization
    512KX18
  • Number of Functions
    1
  • Number of Terminals
    576
  • Terminal Pitch (mm)
    1
  • Access Time-Max (ns)
    0.45
  • Number of Words Code
    512K
  • Memory Density (bits)
    9437184
  • Package Body Material
    PLASTIC/EPOXY
  • Seated Height-Max (mm)
    2.55
  • Supply Voltage-Max (V)
    1.9
  • Supply Voltage-Min (V)
    1.7
  • Supply Voltage-Nom (V)
    1.8
  • Number of Words (words)
    524288
  • Peak Reflow Temperature (Cel)
    260
  • Operating Temperature-Max (Cel)
    85
  • Operating Temperature-Min (Cel)
    -40
  • Time@Peak Reflow Temperature-Max (s)
    40

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IDT70P3337S233RMI