IB2729M170
INTEGRA TECHNOLOGIES INC
- Lifecycle statusContact Mfr
- DescriptionRF Power Bipolar Transistor, 1-Element, S Band, Silicon, NPN
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeR-CDFM-F2
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountYES
- Terminal FormFLAT
- Case ConnectionBASE
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals2
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeNPN
- Highest Frequency BandS BAND
- DC Current Gain-Min (hFE)10
- Transistor Element MaterialSILICON
- Operating Temperature-Max (Cel)200
- Operating Temperature-Min (Cel)-55
- Collector-emitter Voltage-Max (V)70
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IB2729M170
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IB2729M170