IB2226MH15
INTEGRA TECHNOLOGIES INC
- Lifecycle statusContact Mfr
- DescriptionRF Power Bipolar Transistor, 1-Element, S Band, Silicon, NPN
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-XDFM-F2
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountYES
- Terminal FormFLAT
- Case ConnectionBASE
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals2
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeNPN
- Highest Frequency BandS BAND
- Transistor ApplicationAMPLIFIER
- DC Current Gain-Min (hFE)10
- Operating Temperature-Max200 Cel
- Operating Temperature-Min-55 Cel
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max65 V
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IB2226MH15
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IB2226MH15