IB1012S800 by INTEGRA TECHNOLOGIES INC | Sourcengine

INTEGRA TECHNOLOGIES INC IB1012S800

Lifecycle status
Contact Mfr
Description
RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN
Category
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-XDFM-F2
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
YES
Terminal Form
FLAT
Case Connection
BASE
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
2
Power Gain-Min (Gp)
9.5 dB
Package Body Material
UNSPECIFIED
Polarity/Channel Type
NPN
Highest Frequency Band
L BAND
Transistor Application
AMPLIFIER
DC Current Gain-Min (hFE)
10
Operating Temperature-Max
200 Cel
Operating Temperature-Min
-55 Cel
Collector Current-Max (IC)
32.3 A
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
85 V