HYB39M83200L-125
Siemens AG
- Lifecycle statusDiscontinued
- DescriptionSynchronous DRAM, 256KX32, MOS, PQCC68
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.02
- SB Code8542.32.00.15
- TechnologyMOS
- Access ModeMULTI BANK PAGE BURST
- JESD-30 CodeS-PQCC-J68
- Memory Width32
- Package CodeQCCJ
- Package ShapeSQUARE
- Package StyleCHIP CARRIER Meter
- Surface MountYES
- Terminal FormJ BEND
- Memory IC TypeSYNCHRONOUS DRAM
- Operating ModeSYNCHRONOUS
- Number of Ports1
- DLA QualificationNot Qualified
- Temperature GradeCOMMERCIAL
- Terminal PositionQUAD
- Memory Organization256KX32
- Number of Functions1
- Number of Terminals68
- Number of Words Code256K
- Memory Density (bits)8388608
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Supply Voltage-Max (V)3.47
- Supply Voltage-Min (V)3.14
- Supply Voltage-Nom (V)3.3
- Number of Words (words)262144
- Operating Temperature-Max (Cel)70
- Operating Temperature-Min (Cel)0
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