HYB18M1G161BF-6
QIMONDA AG
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- DescriptionDDR1 DRAM, 64MX16, 5.5ns, CMOS, PBGA60
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.32
- SB Code8542.32.00.15
- Width10.5 mm
- Length11 mm
- I/O TypeCOMMON
- TechnologyCMOS
- Access ModeFOUR BANK PAGE BURST
- JESD-30 CodeR-PBGA-B60
- Memory Width16
- Organization64MX16
- Package CodeTFBGA
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, THIN PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density1073741824 bit
- Memory IC TypeDDR1 DRAM
- Operating ModeSYNCHRONOUS
- Refresh Cycles8192
- Terminal Pitch0.8 mm
- Access Time-Max5.5 ns
- Number of Ports1
- Number of Words67108864 words
- Seated Height-Max1.07 mm
- Temperature GradeCOMMERCIAL
- Terminal PositionBOTTOM
- Additional FeatureAUTO/SELF REFRESH
- Supply Current-Max370 mA
- Number of Functions1
- Number of Terminals60
- Standby Current-Max0.0012 Amp
- Number of Words Code64M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Sequential Burst Length2,4,8,16
- Interleaved Burst Length2,4,8,16
- Package Equivalence CodeBGA60,9X10,32
- Operating Temperature-Max70 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Max (Vsup)1.9 V
- Supply Voltage-Min (Vsup)1.7 V
- Supply Voltage-Nom (Vsup)1.8 V
- Clock Frequency-Max (fCLK)166 MHz
- Moisture Sensitivity Level3
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HYB18M1G161BF-6