HARRIS SEMICONDUCTOR HUF76113DK8T
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • JESD-30 Code
    R-PDSO-G8
  • Configuration
    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
  • JEDEC-95 Code
    MS-012AA
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE Meter
  • Surface Mount
    YES
  • Terminal Form
    GULL WING
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Operating Mode
    ENHANCEMENT MODE
  • Terminal Position
    DUAL
  • Additional Feature
    LOGIC LEVEL COMPATIBLE
  • Number of Elements
    2
  • Number of Terminals
    8
  • Qualification Status
    Not Qualified
  • Package Body Material
    PLASTIC/EPOXY
  • Polarity/Channel Type
    N-CHANNEL
  • Drain Current-Max (ID)
    6 A
  • Transistor Application
    SWITCHING
  • DS Breakdown Voltage-Min
    30 V
  • Transistor Element Material
    SILICON
  • Drain-source On Resistance-Max
    0.041 ohm

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HUF76113DK8T
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HUF76113DK8T