HUF75637SMD05
TT ELECTRONICS PLC
- Lifecycle statusActive
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 44A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AA
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-CBCC-N3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-276AA
- Package ShapeRECTANGULAR
- Package StyleCHIP CARRIER Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- DLA QualificationNot Qualified
- Terminal PositionBOTTOM
- Number of Elements1
- Number of Terminals3
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)44
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)100
- Operating Temperature-Max (Cel)175
- Pulsed Drain Current-Max (IDM) (A)160
- Drain-source On Resistance-Max (ohm)0.03
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HUF75637SMD05