HUF75321D3S
HARRIS SEMICONDUCTOR
- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 20A I(D), 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE
- JEDEC-95 CodeTO-252AA
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal FinishTIN LEAD
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals2
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)20 A
- Transistor ApplicationSWITCHING
- Operating Temperature-Max175 Cel
- Power Dissipation-Max (Abs)55 W
- Transistor Element MaterialSILICON
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HUF75321D3S