HTT1129EZTL-E
Renesas Technology Corp.
- Lifecycle statusTransferred
- RoHSRoHS compliant
- DescriptionRF Small Signal Bipolar Transistor, 0.08A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDSO-F6
- ConfigurationSEPARATE, 2 ELEMENTS
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormFLAT
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Number of Elements2
- Number of Terminals6
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeNPN
- Highest Frequency BandULTRA HIGH FREQUENCY BAND
- DC Current Gain-Min (hFE)90
- Power Dissipation-Max (W)0.2
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- Peak Reflow Temperature (Cel)260
- Collector Current-Max (IC) (A)0.08
- Operating Temperature-Max (Cel)150
- Collector-emitter Voltage-Max (V)6
- Collector-base Capacitance-Max (pF)0.65
- Transition Frequency-Nom (fT) (MHz)4000
- Time@Peak Reflow Temperature-Max (s)20
0 suppliers available to buy or to bid for HTT1129EZTL-E
Send an RFQ
Your RFQ will be directly sent to our expert: Pari
Send an RFQ
HTT1129EZTL-E