HSG2005 by Renesas Technology Corp. | Sourcengine

Renesas Technology Corp. HSG2005

Lifecycle status
Transferred
RoHS
RoHS compliant
Description
RF Power Bipolar Transistor, 1-Element, C Band, Silicon Germanium, NPN
Category
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
S-PQSO-N8
Configuration
SINGLE
Package Shape
SQUARE
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
NO LEAD
Case Connection
EMITTER
DLA Qualification
Not Qualified
Terminal Position
QUAD
Number of Elements
1
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
C BAND
Transistor Element Material
SILICON GERMANIUM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Collector Current-Max (IC) (A)
0.4
Collector-emitter Voltage-Max (V)
5
Transition Frequency-Nom (fT) (MHz)
28500
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED