HSG1001VD-
Renesas Technology Corp.
- Lifecycle statusDiscontinued
- DescriptionRF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, C Band, Silicon Germanium, NPN
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDSO-G4
- ConfigurationSINGLE
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- Terminal FinishTIN LEAD
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals4
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeNPN
- Highest Frequency BandC BAND
- Transistor ApplicationAMPLIFIER
- DC Current Gain-Min (hFE)100
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)0.035 A
- Power Dissipation-Max (Abs)0.25 W
- Transistor Element MaterialSILICON GERMANIUM
- Collector-emitter Voltage-Max3.5 V
- Transition Frequency-Nom (fT)35000 MHz
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HSG1001VD-