HSCH-6530
Agilent Technologies, Inc.
- Lifecycle statusTransferred
- DescriptionMixer Diode, Low Barrier, L Band to KU Band, 350ohm Z(V) Max, 7.2dB Noise Figure, Silicon
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.10.00.60
- SB Code8541.10.00.60
- Diode TypeMIXER DIODE
- TechnologySCHOTTKY
- JESD-30 CodeO-CRDB-F3
- ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS
- Package ShapeROUND
- Package StyleDISK BUTTON Meter
- Surface MountYES
- Terminal FormFLAT
- Frequency BandL BAND TO KU BAND
- J-STD-609 Codee0
- Terminal FinishTIN LEAD
- DLA QualificationNot Qualified
- Terminal PositionRADIAL
- Number of Elements2
- Impedance-Max (ohm)350
- Impedance-Min (ohm)150
- Number of Terminals3
- Noise Figure-Max (dB)7.2
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Diode Element MaterialSILICON
- Type of Schottky BarrierLOW BARRIER
- Diode Capacitance-Max (pF)0.22
- CW RF Incident Power-Max (W)0.3
- Operating Frequency-Max (GHz)18
- Operating Frequency-Min (GHz)1
- Operating Temperature-Max (Cel)175
- Pulse RF Incident Power-Max (W)1
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HSCH-6530
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HSCH-6530