HP8S36TB
ROHM Semiconductor
- Lifecycle statusNRFND
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionMOSFET 2N-CH 30V 27A/80A 8HSOP
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PDSO-F6
- Configuration2 N-Channel (Half Bridge)
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN SOURCE
- Terminal PositionDUAL
- Number of Elements2
- Number of Terminals6
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)12
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)30
- Peak Reflow Temperature (Cel)260
- Avalanche Energy Rating (Eas) (mJ)5.3
- Pulsed Drain Current-Max (IDM) (A)48
- Drain-source On Resistance-Max (ohm)0.0133
- Time@Peak Reflow Temperature-Max (s)30
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HP8S36TB