HL8351E
Hitachi, Ltd.
- Lifecycle statusDiscontinued
- DescriptionLaser Diode, 810nm
- Category
- J-STD-609 Codee0
- Terminal FinishTin/Lead (Sn/Pb)
- Mounting FeatureTHROUGH HOLE MOUNT
- Peak Wavelength (nm)810
- Semiconductor MaterialGaAlAs
- Forward Current-Max (A)0.07
- Optoelectronic Device TypeLASER DIODE
- Operating Temperature-Max (Cel)60
- Operating Temperature-Min (Cel)-10
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HL8351E