HL8311E
Hitachi, Ltd.
- Lifecycle statusTransferred
- DescriptionLaser Diode, 830nm
- Category
- ShapeROUND
- Size (mm)3
- ConfigurationSINGLE WITH BUILT-IN PHOTO DIODE
- J-STD-609 Codee0
- Terminal FinishTin/Lead (Sn/Pb)
- Mounting FeatureTHROUGH HOLE MOUNT
- Additional FeatureHIGH RELIABILITY
- Number of Functions1
- Peak Wavelength (nm)830
- Output Power-Nom (mW)15
- Semiconductor MaterialGaAlAs
- Forward Current-Max (A)0.09
- Optoelectronic Device TypeLASER DIODE
- Threshold Current-Max (mA)90
- Operating Temperature-Max (Cel)60
- Operating Temperature-Min (Cel)-10
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HL8311E