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HL65051DG

USHIO OPTO SEMICONDUCTORS, INC.

USHIO OPTO SEMICONDUCTORS, INC. HL65051DG
  • Shape
    ROUND
  • Size (mm)
    1.6
  • Configuration
    SINGLE WITH BUILT-IN PHOTO DIODE
  • Mounting Feature
    RADIAL MOUNT
  • Number of Functions
    1
  • Peak Wavelength (nm)
    660
  • Output Power-Nom (mW)
    130
  • Semiconductor Material
    AlGaInP
  • Forward Current-Max (A)
    0.21
  • Forward Voltage-Max (V)
    3.3
  • Optoelectronic Device Type
    LASER DIODE
  • Threshold Current-Max (mA)
    75
  • Operating Temperature-Max (Cel)
    60
  • Operating Temperature-Min (Cel)
    -10

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HL65051DG
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HL65051DG