HL6343G
Hitachi, Ltd.
- Lifecycle statusTransferred
- DescriptionLaser Diode, 635nm
- Category
- ShapeROUND
- Size (mm)2
- ConfigurationSINGLE WITH BUILT-IN PHOTO DIODE
- Mounting FeatureTHROUGH HOLE MOUNT
- Number of Functions1
- Peak Wavelength (nm)635
- Output Power-Nom (mW)10
- Semiconductor MaterialAlGaInP
- Forward Current-Max (A)0.045
- Forward Voltage-Max (V)2.7
- Optoelectronic Device TypeLASER DIODE
- Threshold Current-Max (mA)30
- Operating Temperature-Max (Cel)50
- Operating Temperature-Min (Cel)-10
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HL6343G