HIP0061AS2 by Renesas Electronics Corp. | Sourcengine

Renesas Electronics Corp. HIP0061AS2

Lifecycle status
Discontinued
REACH
REACH compliant
Description
Power Field-Effect Transistor, 3.5A I(D), 60V, 0.265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-169AC
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSSO-G7
Configuration
COMPLEX
JEDEC-95 Code
MO-169AC
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
7
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
3.5
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
60
Feedback Cap-Max (Crss) (pF)
24
Operating Temperature-Max (Cel)
125
Operating Temperature-Min (Cel)
-40
Avalanche Energy Rating (Eas) (mJ)
100
Pulsed Drain Current-Max (IDM) (A)
10
Drain-source On Resistance-Max (ohm)
0.265