HGTP2N120BND by FAIRCHILD SEMICONDUCTOR CORP | Sourcengine

FAIRCHILD SEMICONDUCTOR CORP HGTP2N120BND

Lifecycle status
Discontinued
REACH
REACH compliant
Description
Insulated Gate Bipolar Transistor, 12A I(C), 1200V V(BR)CES, N-Channel
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Case Connection
COLLECTOR
Terminal Finish
TIN LEAD
Terminal Position
SINGLE
Additional Feature
LOW CONDUCTION LOSS
Fall Time-Max (tf)
200 ns
Number of Elements
1
Rise Time-Max (tr)
15 ns
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Application
MOTOR CONTROL
Turn-on Time-Nom (ton)
36 ns
Gate-emitter Voltage-Max
20 V
Turn-off Time-Nom (toff)
355 ns
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
12 A
Power Dissipation-Max (Abs)
104 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
1200 V