HGTP14N36G3VL
HARRIS SEMICONDUCTOR
- Lifecycle statusTransferred
- DescriptionInsulated Gate Bipolar Transistor, 18A I(C), N-Channel, TO-220AB
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- ApplicationAUTOMOTIVE IGNITION
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE AND RESISTOR
- JEDEC-95 CodeTO-220AB
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- VCEsat-Max (V)2.2
- Case ConnectionCOLLECTOR
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Additional FeatureVOLTAGE CLAMPING
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Transistor Element MaterialSILICON
- Gate-emitter Voltage-Max (V)10
- Collector Current-Max (IC) (A)18
- Operating Temperature-Max (Cel)175
- Gate-emitter Thr Voltage-Max (V)2.2
- Power Dissipation Ambient-Max (W)100
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HGTP14N36G3VL