HGTP12N60A4D
Intersil Corporation
- Lifecycle statusTransferred
- DescriptionInsulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-220AB
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationMOTOR CONTROL
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-220AB
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- J-STD-609 Codee0
- Case ConnectionCOLLECTOR
- Terminal FinishTin/Lead (Sn/Pb)
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Additional FeatureLOW CONDUCTION LOSS
- Fall Time-Max (ns)18
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Rise Time-Max (tr) (ns)8
- Power Dissipation-Max (W)167
- Transistor Element MaterialSILICON
- Turn-on Time-Nom (ton) (ns)33
- Gate-emitter Voltage-Max (V)20
- Turn-off Time-Nom (toff) (ns)180
- Collector Current-Max (IC) (A)54
- Operating Temperature-Max (Cel)150
- Gate-emitter Thr Voltage-Max (V)5.6
- Collector-emitter Voltage-Max (V)600
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HGTP12N60A4D