HGTP12N50E1
HARRIS SEMICONDUCTOR
- Lifecycle statusDiscontinued
- DescriptionInsulated Gate Bipolar Transistor, 12A I(C), 500V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-609 Codee0
- Surface MountNO
- Terminal FinishTin/Lead (Sn/Pb)
- Fall Time-Max (tf)1000 ns
- Rise Time-Max (tr)50 ns
- Polarity/Channel TypeN-CHANNEL
- Gate-emitter Voltage-Max20 V
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)12 A
- Power Dissipation-Max (Abs)75 W
- Gate-emitter Thr Voltage-Max4.5 V
- Collector-emitter Voltage-Max500 V
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HGTP12N50E1
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HGTP12N50E1