HGTG5N120CND
FAIRCHILD SEMICONDUCTOR CORP
- Lifecycle statusDiscontinued
- DescriptionInsulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, TO-247
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-247
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- Case ConnectionCOLLECTOR
- Terminal FinishTIN LEAD
- Terminal PositionSINGLE
- Additional FeatureLOW CONDUCTION LOSS
- Fall Time-Max (tf)350 ns
- Number of Elements1
- Rise Time-Max (tr)16 ns
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationMOTOR CONTROL
- Turn-on Time-Nom (ton)32 ns
- Gate-emitter Voltage-Max20 V
- Turn-off Time-Nom (toff)575 ns
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)25 A
- Power Dissipation-Max (Abs)167 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max1200 V
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HGTG5N120CND