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HGTD8P50G1S9A

HARRIS SEMICONDUCTOR

HARRIS SEMICONDUCTOR HGTD8P50G1S9A
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8541.29.00.95
  • SB Code
    8541.29.00.80
  • Application
    POWER CONTROL
  • JESD-30 Code
    R-PSSO-G2
  • Configuration
    SINGLE
  • JEDEC-95 Code
    TO-252AA
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE Meter
  • Surface Mount
    YES
  • Terminal Form
    GULL WING
  • VCEsat-Max (V)
    3.7
  • Case Connection
    COLLECTOR
  • DLA Qualification
    Not Qualified
  • Terminal Position
    SINGLE
  • Fall Time-Max (ns)
    2500
  • Number of Elements
    1
  • Number of Terminals
    2
  • Package Body Material
    PLASTIC/EPOXY
  • Polarity/Channel Type
    P-CHANNEL
  • Transistor Element Material
    SILICON
  • Turn-on Time-Nom (ton) (ns)
    45
  • Gate-emitter Voltage-Max (V)
    20
  • Turn-off Time-Max (toff) (ns)
    680
  • Turn-off Time-Nom (toff) (ns)
    480
  • Collector Current-Max (IC) (A)
    12
  • Operating Temperature-Max (Cel)
    150
  • Gate-emitter Thr Voltage-Max (V)
    6
  • Collector-emitter Voltage-Max (V)
    500
  • Power Dissipation Ambient-Max (W)
    66

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HGTD8P50G1S9A