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HGTD7N60B3

HARRIS SEMICONDUCTOR

HARRIS SEMICONDUCTOR HGTD7N60B3
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • JESD-30 Code
    R-PSIP-T3
  • Configuration
    SINGLE
  • JEDEC-95 Code
    TO-251AA
  • Package Shape
    RECTANGULAR
  • Package Style
    IN-LINE Meter
  • Surface Mount
    NO
  • Terminal Form
    THROUGH-HOLE
  • J-STD-609 Code
    e0
  • Terminal Finish
    TIN LEAD
  • DLA Qualification
    Not Qualified
  • Terminal Position
    SINGLE
  • Fall Time-Max (ns)
    80
  • Number of Elements
    1
  • Number of Terminals
    3
  • Package Body Material
    PLASTIC/EPOXY
  • Polarity/Channel Type
    N-CHANNEL
  • Power Dissipation-Max (W)
    60
  • Transistor Element Material
    SILICON
  • Gate-emitter Voltage-Max (V)
    20
  • Collector Current-Max (IC) (A)
    14
  • Operating Temperature-Max (Cel)
    150
  • Gate-emitter Thr Voltage-Max (V)
    6
  • Collector-emitter Voltage-Max (V)
    600

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HGTD7N60B3
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HGTD7N60B3