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HGTD10N50F1

HARRIS SEMICONDUCTOR

HARRIS SEMICONDUCTOR HGTD10N50F1
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8541.29.00.95
  • SB Code
    8541.29.00.80
  • VCEsat-Max
    2.2 V
  • JESD-30 Code
    R-PSIP-T3
  • Configuration
    SINGLE
  • JEDEC-95 Code
    TO-251AA
  • JESD-609 Code
    e0
  • Package Shape
    RECTANGULAR
  • Package Style
    IN-LINE Meter
  • Surface Mount
    NO
  • Terminal Form
    THROUGH-HOLE
  • Case Connection
    COLLECTOR
  • Terminal Finish
    TIN LEAD
  • Terminal Position
    SINGLE
  • Number of Elements
    1
  • Number of Terminals
    3
  • Qualification Status
    Not Qualified
  • Package Body Material
    PLASTIC/EPOXY
  • Polarity/Channel Type
    N-CHANNEL
  • Transistor Application
    POWER CONTROL
  • Gate-emitter Voltage-Max
    20 V
  • Operating Temperature-Max
    150 Cel
  • Collector Current-Max (IC)
    12 A
  • Power Dissipation-Max (Abs)
    75 W
  • Transistor Element Material
    SILICON
  • Gate-emitter Thr Voltage-Max
    4.5 V
  • Collector-emitter Voltage-Max
    500 V
  • Power Dissipation Ambient-Max
    75 W

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HGTD10N50F1