HGT1S3N60B3S
FAIRCHILD SEMICONDUCTOR CORP
- Lifecycle statusDiscontinued
- REACHREACH compliant
- DescriptionInsulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-263AB
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE
- JEDEC-95 CodeTO-263AB
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- Case ConnectionCOLLECTOR
- Terminal FinishTIN LEAD
- Terminal PositionSINGLE
- Additional FeatureLOW CONDUCTION LOSS
- Fall Time-Max (tf)175 ns
- Number of Elements1
- Number of Terminals2
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationMOTOR CONTROL
- Turn-on Time-Nom (ton)34 ns
- Gate-emitter Voltage-Max20 V
- Turn-off Time-Nom (toff)335 ns
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)7 A
- Power Dissipation-Max (Abs)33.3 W
- Transistor Element MaterialSILICON
- Gate-emitter Thr Voltage-Max6 V
- Collector-emitter Voltage-Max600 V
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HGT1S3N60B3S