HGT1S2N120CNDS9A
FAIRCHILD SEMICONDUCTOR CORP
- Lifecycle statusDiscontinued
- REACHREACH compliant
- DescriptionInsulated Gate Bipolar Transistor, 13A I(C), 1200V V(BR)CES, N-Channel, TO-263AB
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-263AB
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- Case ConnectionCOLLECTOR
- Terminal FinishTIN LEAD
- Terminal PositionSINGLE
- Additional FeatureLOW CONDUCTION LOSS
- Fall Time-Max (tf)420 ns
- Number of Elements1
- Rise Time-Max (tr)15 ns
- Number of Terminals2
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationMOTOR CONTROL
- Turn-on Time-Nom (ton)32 ns
- Gate-emitter Voltage-Max20 V
- Turn-off Time-Nom (toff)585 ns
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)13 A
- Power Dissipation-Max (Abs)104 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max1200 V
0 suppliers available to buy or to bid for HGT1S2N120CNDS9A
Send an RFQ
Send an RFQ Your RFQ will be directly sent to our expert: Pari
Send an RFQ
HGT1S2N120CNDS9A
Send an RFQ
HGT1S2N120CNDS9A