HGT1S20N60C3RS9A
HARRIS SEMICONDUCTOR
- Lifecycle statusDiscontinued
- DescriptionInsulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-263AB
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE
- JEDEC-95 CodeTO-263AB
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- Case ConnectionCOLLECTOR
- Terminal PositionSINGLE
- Additional FeatureLOW CONDUCTION LOSS, ULTRA FAST SWITCHING
- Number of Elements1
- Number of Terminals2
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationMOTOR CONTROL
- Turn-on Time-Nom (ton)34 ns
- Turn-off Time-Nom (toff)390 ns
- Collector Current-Max (IC)40 A
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max600 V
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HGT1S20N60C3RS9A