HGT1S20N60B3S
Intersil Corporation
- Lifecycle statusTransferred
- DescriptionInsulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-263AB
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationMOTOR CONTROL
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE
- JEDEC-95 CodeTO-263AB
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- J-STD-609 Codee0
- Case ConnectionCOLLECTOR
- Terminal FinishTin/Lead (Sn/Pb)
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Additional FeatureLOW CONDUCTION LOSS
- Fall Time-Max (ns)200
- Number of Elements1
- Number of Terminals2
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)165
- Transistor Element MaterialSILICON
- Turn-on Time-Nom (ton) (ns)45
- Gate-emitter Voltage-Max (V)20
- Turn-off Time-Nom (toff) (ns)360
- Collector Current-Max (IC) (A)40
- Operating Temperature-Max (Cel)150
- Gate-emitter Thr Voltage-Max (V)6
- Collector-emitter Voltage-Max (V)600
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HGT1S20N60B3S