HGT1S20N35G3VLS9A
FAIRCHILD SEMICONDUCTOR CORP
- Lifecycle statusDiscontinued
- REACHREACH compliant
- DescriptionInsulated Gate Bipolar Transistor, 20A I(C), 320V V(BR)CES, N-Channel, TO-263AB
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE WITH BUILT-IN DIODE AND RESISTOR
- JEDEC-95 CodeTO-263AB
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- Case ConnectionCOLLECTOR
- Terminal FinishTin/Lead (Sn/Pb)
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals2
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationAUTOMOTIVE IGNITION
- Gate-emitter Voltage-Max12 V
- Turn-off Time-Nom (toff)15000 ns
- Operating Temperature-Max175 Cel
- Collector Current-Max (IC)20 A
- Power Dissipation-Max (Abs)150 W
- Transistor Element MaterialSILICON
- Gate-emitter Thr Voltage-Max2.3 V
- Collector-emitter Voltage-Max320 V
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