HGT1S1N120CNDS
Intersil Corporation
- Lifecycle statusTransferred
- DescriptionInsulated Gate Bipolar Transistor, 6.2A I(C), 1200V V(BR)CES, N-Channel, TO-263AB
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationMOTOR CONTROL
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-263AB
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- J-STD-609 Codee0
- Case ConnectionCOLLECTOR
- Terminal FinishTin/Lead (Sn/Pb)
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Fall Time-Max (ns)450
- Number of Elements1
- Number of Terminals2
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Rise Time-Max (tr) (ns)15
- Power Dissipation-Max (W)60
- Transistor Element MaterialSILICON
- Turn-on Time-Nom (ton) (ns)26
- Gate-emitter Voltage-Max (V)20
- Turn-off Time-Nom (toff) (ns)430
- Collector Current-Max (IC) (A)6.2
- Operating Temperature-Max (Cel)150
- Gate-emitter Thr Voltage-Max (V)7.1
- Collector-emitter Voltage-Max (V)1200
0 suppliers available to buy or to bid for HGT1S1N120CNDS
Send an RFQ
Send an RFQ Your RFQ will be directly sent to our expert: Pari
Send an RFQ
HGT1S1N120CNDS
Send an RFQ
HGT1S1N120CNDS