HGT1S14N37G3VLS
Intersil Corporation
- Lifecycle statusTransferred
- DescriptionInsulated Gate Bipolar Transistor, 25A I(C), N-Channel, TO-263AB
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAUTOMOTIVE IGNITION
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE WITH BUILT-IN DIODE AND RESISTOR
- JEDEC-95 CodeTO-263AB
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- J-STD-609 Codee0
- Case ConnectionCOLLECTOR
- Terminal FinishTin/Lead (Sn/Pb)
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals2
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Rise Time-Max (tr) (ns)7000
- Power Dissipation-Max (W)136
- Transistor Element MaterialSILICON
- Turn-on Time-Nom (ton) (ns)4000
- Gate-emitter Voltage-Max (V)12
- Turn-off Time-Nom (toff) (ns)10000
- Collector Current-Max (IC) (A)25
- Operating Temperature-Max (Cel)175
- Gate-emitter Thr Voltage-Max (V)2.2
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HGT1S14N37G3VLS