HGT1S12N60C3DS9A by FAIRCHILD SEMICONDUCTOR CORP | Sourcengine

FAIRCHILD SEMICONDUCTOR CORP HGT1S12N60C3DS9A

Lifecycle status
Discontinued
REACH
REACH compliant
Description
Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-263AB
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-263AB
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Case Connection
COLLECTOR
Terminal Finish
TIN LEAD
Terminal Position
SINGLE
Additional Feature
LOW CONDUCTION LOSS
Fall Time-Max (tf)
275 ns
Number of Elements
1
Number of Terminals
2
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Application
MOTOR CONTROL
Turn-on Time-Nom (ton)
48 ns
Gate-emitter Voltage-Max
20 V
Turn-off Time-Nom (toff)
480 ns
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
24 A
Power Dissipation-Max (Abs)
104 W
Transistor Element Material
SILICON
Gate-emitter Thr Voltage-Max
6 V
Collector-emitter Voltage-Max
600 V