HGT1S12N60B3
Intersil Corporation
- Lifecycle statusDiscontinued
- DescriptionInsulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-609 Codee0
- Surface MountNO
- Terminal FinishTin/Lead (Sn/Pb)
- Fall Time-Max (tf)175 ns
- Polarity/Channel TypeN-CHANNEL
- Gate-emitter Voltage-Max20 V
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)27 A
- Power Dissipation-Max (Abs)104 W
- Gate-emitter Thr Voltage-Max6 V
- Collector-emitter Voltage-Max600 V
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HGT1S12N60B3
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HGT1S12N60B3