HGT1S12N60A4S9A
FAIRCHILD SEMICONDUCTOR CORP
- Lifecycle statusDiscontinued
- DescriptionInsulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-263AB
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- ApplicationPOWER CONTROL
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE
- JEDEC-95 CodeTO-263AB
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- J-STD-609 Codee3
- Case ConnectionCOLLECTOR
- Terminal FinishMATTE TIN
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Additional FeatureLOW CONDUCTION LOSS
- Fall Time-Max (ns)95
- Number of Elements1
- Number of Terminals2
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)167
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- Turn-on Time-Nom (ton) (ns)33
- Gate-emitter Voltage-Max (V)20
- Peak Reflow Temperature (Cel)260
- Turn-off Time-Nom (toff) (ns)180
- Collector Current-Max (IC) (A)54
- Operating Temperature-Max (Cel)150
- Collector-emitter Voltage-Max (V)600
- Time@Peak Reflow Temperature-Max (s)30
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HGT1S12N60A4S9A