HGT1N40N60A4D by FAIRCHILD SEMICONDUCTOR CORP | Sourcengine

FAIRCHILD SEMICONDUCTOR CORP HGT1N40N60A4D

Lifecycle status
Discontinued
REACH
REACH compliant
Description
Insulated Gate Bipolar Transistor, 110A I(C), 600V V(BR)CES, N-Channel
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PUFM-X4
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
Case Connection
ISOLATED
DLA Qualification
Not Qualified
Terminal Position
UPPER
Additional Feature
LOW CONDUCTION LOSS
Fall Time-Max (ns)
95
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
298
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
47
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
240
Collector Current-Max (IC) (A)
110
Operating Temperature-Max (Cel)
150
Gate-emitter Thr Voltage-Max (V)
7
Collector-emitter Voltage-Max (V)
600