HB52E169E12-A6D
Hitachi, Ltd.
- Lifecycle statusDiscontinued
- DescriptionSynchronous DRAM Module, 16MX4, 6.9ns, CMOS
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.02
- SB Code8542.32.00.15
- Width4 mm
- Length133.595 mm
- TechnologyCMOS
- Access ModeSINGLE BANK PAGE BURST
- JESD-30 CodeR-XDMA-N168
- Memory Width4
- Organization16MX4
- Package CodeDIMM
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleMICROELECTRONIC ASSEMBLY Meter
- Surface MountNO
- Terminal FormNO LEAD
- Memory Density67108864 bit
- Memory IC TypeSYNCHRONOUS DRAM MODULE
- Operating ModeSYNCHRONOUS
- Terminal Pitch1.27 mm
- Access Time-Max6.9 ns
- Number of Ports1
- Number of Words16777216 words
- Seated Height-Max43.18 mm
- Temperature GradeCOMMERCIAL
- Terminal PositionDUAL
- Additional FeatureAUTO/SELF REFRESH; WD-MAX; SEATED HGT-NOM
- Number of Functions1
- Number of Terminals168
- Number of Words Code16M
- Qualification StatusNot Qualified
- Package Body MaterialUNSPECIFIED
- Operating Temperature-Max55 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Max (Vsup)3.6 V
- Supply Voltage-Min (Vsup)3 V
- Supply Voltage-Nom (Vsup)3.3 V
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HB52E169E12-A6D