HAT2080T by Renesas Electronics Corp. | Sourcengine

Renesas Electronics Corp. HAT2080T

Lifecycle status
Discontinued
REACH
REACH compliant
Description
Power Field-Effect Transistor, 0.0012A I(D), 250V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-G8
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
1.3
Drain Current-Max (ID) (A)
0.0012
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
250
Operating Temperature-Max (Cel)
150
Drain-source On Resistance-Max (ohm)
0.85