HAT2059R
Hitachi, Ltd.
- Lifecycle statusTransferred
- DescriptionPower Field-Effect Transistor, 2.5A I(D), 0.38ohm, N-Channel, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDSO-G8
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Number of Terminals8
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)3
- Drain Current-Max (ID) (A)2.5
- Operating Temperature-Max (Cel)150
- Drain-source On Resistance-Max (ohm)0.38
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HAT2059R
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HAT2059R