HAT2026REL
Renesas Technology Corp.
- Lifecycle statusTransferred
- DescriptionPower Field-Effect Transistor, 11A I(D), 20V, 0.021ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PDSO-G8
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Number of Terminals8
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)11
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)20
- Drain-source On Resistance-Max (ohm)0.021
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HAT2026REL