HAF1004(L)-(2)
Hitachi, Ltd.
- Lifecycle statusTransferred
- DescriptionPower Field-Effect Transistor, 5A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ConfigurationSINGLE
- Surface MountNO
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Number of Elements1
- Polarity/Channel TypeP-CHANNEL
- Power Dissipation-Max (W)20
- Drain Current-Max (ID) (A)5
- Operating Temperature-Max (Cel)150
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HAF1004(L)-(2)
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HAF1004(L)-(2)