H55S1262EFP-A3M
SK Hynix
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionStatic Column DRAM, 8MX16, 7ns, CMOS, PBGA54
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.02
- SB Code8542.32.00.15
- Width8 mm
- Length8 mm
- I/O TypeCOMMON
- TechnologyCMOS
- Access ModeFOUR BANK PAGE BURST
- JESD-30 CodeS-PBGA-B54
- Memory Width16
- Organization8MX16
- Package CodeVFBGA
- Self RefreshYES
- JESD-609 Codee1
- Package ShapeSQUARE
- Package StyleGRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density134217728 bit
- Memory IC TypeSTATIC COLUMN DRAM
- Operating ModeSYNCHRONOUS
- Refresh Cycles4096
- Terminal Pitch0.8 mm
- Access Time-Max7 ns
- Number of Ports1
- Number of Words8388608 words
- Terminal FinishTIN SILVER COPPER
- Seated Height-Max1 mm
- Temperature GradeOTHER
- Terminal PositionBOTTOM
- Additional FeatureAUTO/SELF REFRESH
- Number of Functions1
- Number of Terminals54
- Number of Words Code8M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Sequential Burst Length1,2,4,8,FP
- Interleaved Burst Length1,2,4,8
- Package Equivalence CodeBGA54,9X9,32
- Operating Temperature-Max85 Cel
- Operating Temperature-Min-30 Cel
- Supply Voltage-Max (Vsup)1.95 V
- Supply Voltage-Min (Vsup)1.7 V
- Supply Voltage-Nom (Vsup)1.8 V
- Clock Frequency-Max (fCLK)105 MHz
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)20
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H55S1262EFP-A3M